a Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
b Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-216, Shanghai 201800, People's Republic of China
Abstract:
The optical parameters of GeTe semiconductor films after various thermal treatments have been measured using a novel method. A comparative study using a spectrum ellipsometer is presented. The optical parameters of the films were extracted precisely by data analysis and corrections have been made to previous calculations. Calculations based on the spectral ellipsometry measurements are presented finally, and the complex refractive index curves of the samples in the spectral range from 250 to 830 nm have been obtained.