SOI 动态阈值MOS 研究进展

随着器件尺寸的不断缩小，传统MOS器件遇到工作电压和阈值电压难以等比例缩小的难题，以至于降低电路性能，而工作在低压低功耗领域的SOI DTMOS可以有效地解决这个问题。本文介绍了四种类型的SOI DTMOS器件．其中着重论述了栅体直接连接DTMOS、双栅DTMOS和栅体肖特基接触DTMOS的工作原理和性能．具体分析了优化器件性能的五种方案，探讨了SOI DTMOS存在的优势和不足。最后指出，具有出色性能的SOI DTMOS必将在未来的移动通讯和SOC等低压低功耗电路中占有一席之地。

Overview of SOI DTMOS (Dynamic-Threshold MOSFET)

With the reduction of critical dimension, conventional MOSFET has met with a challenge that power supply and threshold voltage can not be scaled down at the same pace so that the performance of circuit is degraded. SOI DTMOS, which is a new type of MOS device applied in low-voltage and low-power VLSI , can resolve this problem effectively. Four types of SOI DTMOS devices are introduced .The basic principle and performance of gate-body directly tied DTMOS, double gates DTMOS and gate-body tied by Schottky junction DTMOS are mainly described. The methods to improve the performance of SOI DTMOS are discussed, and the advantages and disadvantages of this kind of devices are listed. With excellent performance SOI DTMOS will find a place in the applications of mobile communication systems, SOC(system-on-a-chip) and so on.