Linearly varying surface-implanted n layer used for improving trade-off between breakdown voltage and on-resistance of RESURF LDMOS transistor |
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| Authors: | Jin He Xing Zhang Yang Yuan Wang |
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| Affiliation: | Institute of Microelectronics, Peking University, Beijing 00871, People's Republic of China |
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| Abstract: | A new RESURF LDMOS transistor using a linearly varying surface-implanted doped (LVD) n? layer is reported. Detailed numerical simulations demonstrate the characteristics of this device incorporating an LVD n? layer and indicate an enhancement on the performance in comparison to an optimal conventional structure with an uniform epi-layer concentration. |
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| Keywords: | RESURF LDMOS Power transistor Linearly varying surface-implanted doped (LVD) n? layer |
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