SiC/SiO_2镶嵌结构薄膜光致发光特性研究

采用 SiC/SiO_2复合靶,用射频磁控共溅射技术和高温退火的方法制备了 SiC/SiO_2纳米镶嵌结构复合薄膜,并应用傅里叶红外吸收(FTIR),X 射线衍射(XRD),扫描电镜(SEM)和光致发光(PL)实验分析了薄膜的结构、表面形貌以及光致发光性能。结果表明,样品经高温退火后在 SiO_2基质中有 SiC 纳米颗粒形成。以 280 nm 波长光激发样品薄膜表面,显示出较强的 365 nm 的紫外光发射以及 458 nm 和 490 nm 处的蓝光发射,其发光强度随退火温度从 800℃升高至 1 050℃而增强。其发光归结为薄膜中与 Si-O 相关的缺陷形成的发光中心。

Studies of Photoluminescence Properties of SiC/SiO2 Composite Thin Films

SiC/SiO_2 nano-composite thin films were prepared on Si(111) substrates by radio frequency magnetron co-sputtering and high temperature annealing with a SiC/SiO_2 composite target. The structure, morphology and photoluminescent properties of the films was determined by Fourier transform infrared transmission spectroscopy (FTIR)、 X-ray diffraction (XRD)、scanning electronic microscopy (SEM) and photoluminescence (PL). The results show that SiC nanocrystals are dispersed in the SiO_2 matrix. Excited by 280nm light at room temperature, the films were found strong emission peaks at 365nm (ultraviolet band), 458nm and 490nm (blue bands). It was found that the PL intensity increased with the increasing annealing temperature. The origin of the PL spectra was attributed into the Si-O related defects.