0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58Ge0.42 n-MODFETs |
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Authors: | Enciso M. Aniel F. Crozat P. Adde R. Zeuner M. Fox A. Hackbarth T. |
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Affiliation: | Inst. d'Electron. Fondamentale, Paris-Sud Univ., Orsay; |
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Abstract: | RF and microwave noise performances of strained Si/Si0.58 Ge0.42 n-MODFETs are presented for the first time. The 0.13 μm gate devices have de-embedded fT=49 GHz, fmax =70 GHz and a record intrinsic gm=700 mS/mm. A de-embedded minimum noise figure NFmin=0.3 dB with a 41 Ω noise resistance Rn and a 19 dB associated gain Gass are obtained at 2.5 GHz, while NFmin=2.0 dB with Gass=10 dB at 18 GHz. The noise parameters measured up to 18 GHz and from 10 to 180 mA/mm with high gain and low power dissipation show the potential of SiGe MODFETs for mobile communications |
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