| 基于平均迁移率模型的SiC埋沟MOSFET Ⅰ-Ⅴ特性 |
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| 引用本文： | 郜锦侠,张义门,张玉明,夏杰.基于平均迁移率模型的SiC埋沟MOSFET Ⅰ-Ⅴ特性[J].固体电子学研究与进展,2007(2). |
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| 作者姓名： | 郜锦侠 张义门 张玉明 夏杰 |
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| 作者单位： | [1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室 [2]西安 [3]710071 |
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| 基金项目： | 国家自然科学基金(60276047) |
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| 摘 要： | 提出了一种SiC隐埋沟道MOSFET平均迁移率模型,并在此基础上对器件I-V特性进行了研究。采用一个随栅压变化的平均电容公式,并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。计算漏电流时考虑了埋沟器件的三种工作模式,推出了各种工作模式下的漏电流表达式,并用实验值对模型进行了验证。
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| 关 键 词： | 碳化硅 隐埋沟道 金属氧化物半导体场效应晶体管 平均迁移率模型 伏安特性 |
A Study of Ⅰ-Ⅴ Characteristics for SiC Buried-channel MOSFETs Based on an Average Mobility Model |
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| GAO Jinxia ZHANG Yimen ZHANG Yuming XIA Jie.A Study of Ⅰ-Ⅴ Characteristics for SiC Buried-channel MOSFETs Based on an Average Mobility Model[J].Research & Progress of Solid State Electronics,2007(2). |
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| Authors: | GAO Jinxia ZHANG Yimen ZHANG Yuming XIA Jie |
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| Abstract: | The I-V characteristics for SiC buried-channel MOSFETs based on an average mobility model is presented.The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.Three different operational modes are included in the calculation of drain current,and the expressions of drain current in various modes are derived.A good agreement is obtained between calculated and measured results. |
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| Keywords: | SiC buried-channel MOSFET average mobility model I-V characteristics |
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