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The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs |
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| Affiliation: | 1. University of Veracruz, Xalapa, Veracruz, Mexico;2. Dept. of Electronic Engineering, National Institute for Astrophysics, Optics and Electronics-INAOE, Puebla, Mexico;1. School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing, 100124, PR China;2. Beijing Nari Smart-Chip Microelectronics Technology Company, Ltd., Beijing, 100192, PR China;1. Wolfson School of Mechanical and Manufacturing Engineering, Loughborough University, Loughborough LE11 3TU, UK;2. GE Aviation Systems-Newmarket, 351 Exning Road, Newmarket, Suffolk CB8 0AU, UK;1. Computer Science & Engineering, Indian Institute of Technology, Indore, India;2. Electrical & Computer Engineering, Ryerson University, Toronto, Canada |
| Abstract: | The electrical characteristics of AlGaN/GaN high electron mobility transistors under the application of uniform in-plane tensile and compressive stress were measured. The results demonstrate the change of the drain–source Ids–Vds characteristics as a function of the external stress. The output current at Vds = 10 V increases linearly with the stress with the slope about 3 × 10−6 A MPa−1. It is associated with the piezoelectric effect and kink effect. Moreover, the magnitude of the kink effect is found to be affected by the stress. It displays a linear changing trend with the slope of 3.3 × 10−4 mS MPa−1 within the stress level. The energy band structure is suggested to be responsible for the dependence of the kink effect on the stress. |
| Keywords: | AlGaN/GaN HEMT Uniform in-plane stress DC output characteristic Kink effect |
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