Current conduction mechanism of MIS devices using multidimensional minimization system program |
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Affiliation: | 1. Department Science de la matière, Université Larbi Tebessi, Tébessa 12000, Alegria;2. Laboratoire Optoélectronique et composants, Université Ferhat Abbas Sétif, 19000, Alegria;3. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Schottkystrasse 10, Erlangen 91058, Germany;4. Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, Erlangen 91058, Germany;1. State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University, Beijing 100084, PR China;2. Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, PR China;1. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;2. Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, Jinan 250022, China |
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Abstract: | The present work presents an evaluation approach which enables the in-depth analysis of current–voltage (I–V) characteristics of MIS devices to determine their current transport mechanisms using a multidimensional minimization system program.Exemplarily, the current transport mechanisms were determined for a TiN/SiO2/p-Si MOS and a TaN/HfSiO/SiO2/p-Si MIS structure by fitting the analytical expressions for different current transport mechanisms to experimental I–V data in a wide range of applied biases and temperatures. The considered mechanisms for the investigated samples include temperature dependent Fowler–Nordheim (FN) tunneling and Poole–Frenkel (PF) emission as well as ohmic conduction. The presented approach can easily be extended to account for additional mechanisms such as trap assisted tunneling (TAT) if relevant for different samples. In contrast to typical extraction procedures which determine current conduction mechanism parameters sequentially, in this work, the adjustable fit parameters are extracted in a single operation using the Levenberg–Marquardt algorithm (Nash, 1990) to obtain a least-square fit of the model to measured I–V characteristics. Thus, simultaneously occurring current mechanisms can properly be evaluated which allows to determine the fraction of each conduction mechanism quantitatively for each voltage. |
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Keywords: | MIS Fowler–Nordheim Poole–Frenkel Temperature dependence Current conduction mechanisms Optimization method |
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