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Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device
Affiliation:1. Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302, India;2. SSN Research Center, Tamil Nadu 603110, India;1. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France;2. CEA LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France;3. Aix-Marseille Université, CNRS, IM2NP UMR 7334, Campus de Saint Jérôme, avenue Escadrille Normandie Niemen, 13397 Marseille Cedex 20, France;1. Dipartimento di Scienze Matematiche, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy;2. Dipartimento di matematica “Federigo Enriquez”, Via Saldini 50, 20133 Milano, Italy;1. School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea;2. Research and Development Division, SK Hynix Semiconductor Inc., Incheon, Republic of Korea;1. Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea;2. Department of Mechanics & Design, Kookmin University, Jeongneung-Ro 77, Seongbuk-Gu, Seoul 136-702, Republic of Korea;3. Future Convergence Research Division, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;1. Integrated Surface Technologies, Inc., Menlo Park, CA 94025, USA;2. School for the Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287-6106, USA
Abstract:Potential application of amorphous silicon nitride (a-Si3N4)/silicon oxy-nitride (SiON) film has been demonstrated as resistive non-volatile memory (NVM) device by studying the Al/Si3N4/SiON/p-Si metal–insulator–semiconductor (MIS) structure. The existence of several deep trap states was revealed by the photoluminescence characterizations. The bipolar resistive switching operation of this device was investigated by current–voltage measurements whereas the trap charge effect was studied in detail by hysteresis behavior of frequency dependent capacitance–voltage characteristics. A memory window of 4.6 V was found with the interface trap density being 6.4 × 1011 cm−2 eV−1. Excellent charge retention characteristics have been observed for the said MIS structure enabling it to be used as a reliable non-volatile resistive memory device.
Keywords:PECVD  Amorphous silicon nitride  Resistive switching  Trap charge  Memory window  Non-volatile memory
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