The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors |
| |
| Affiliation: | 1. Dept. of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;2. Dept. of Electrical Engineering, National Central University, Jhongli, Taiwan, ROC;1. School of Electrical and Computer Engineering, University of Tehran, Iran;2. Department of Electrical Engineering, Shahed University, Iran;3. Department of EE-Systems, University of Southern California, United States;1. University of Veracruz, Xalapa, Veracruz, Mexico;2. Dept. of Electronic Engineering, National Institute for Astrophysics, Optics and Electronics-INAOE, Puebla, Mexico;1. IBM T.J. Watson Research Center, Route 134, Yorktown Heights, NY 10598, USA;2. IBM Systems and Technology Group, IBM Deutschland Research and Development, Boeblingen, Germany |
| |
| Abstract: | In this work, the InAs/AlSb high electron mobility transistors (HEMTs) on GaAs semi-insulating substrate using refractory iridium (Ir) gate technology was proposed. The Ir-gate exhibited a superior metal work function which was beneficial for increasing Schottky barrier height of InAs/AlSb heterostructures to 0.58 eV. Compared to the Ti-gate HEMT, the Ir-gate HEMT shows higher threshold voltage and lower gate leakage current owing to its higher Schottky barrier height and higher melting point. Moreover, the Ir-gated HEMT also shows the manifest stability improvement of DC characteristics under hot carrier stress as the Ti and As diffusion is alleviated. |
| |
| Keywords: | Iridium AlSb/InAs Hot carrier stress Reliability |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
