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All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime
Affiliation:1. Universidade do Algarve, FCT, Campus de Gambelas, Faro, Portugal;2. IT-Instituto de Telecomunicações, Av. Rovisco, Pais, 1, Lisboa, Portugal;3. IT-Instituto de Telecomunicações, Departamento de Engenharia Eletrotécnica e de Computadores, Universidade de Coimbra, 3030-290 Coimbra, Portugal;4. Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Center, 80055 Portici (Naples), Italy;5. Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Bellaterra, Catalonia, Spain;6. Chemnitz University of Technology, Digital Printing and Imaging Technology, Chemnitz, Germany;7. Fraunhofer Institute for Electronic Nano Systems (ENAS), Printed Functionalities, Chemnitz, Germany;8. Department of Chemistry, Imperial College, London, London SW7 2AZ, UK;9. CAIAC, Universitat Autònoma de Barcelona, Bellaterra, Catalonia, Spain;1. Department of Printed Electronics Engineering, Sunchon National University, Maegok, Sunchon, Jeonnam 540-742, North Korea;2. NEEM Scientific Inc, San Diego, CA 92129, USA;1. Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea;2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea;3. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea;4. Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea;1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China;2. Printable Electronics Research Centre, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, PR China;3. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren’ai Road, Suzhou, 215123, Jiangsu, PR China;4. Key Laboratory for Space Utilization, Technology and Engineering Center for Space Utilization, Chinese Academy of Sciences, No 9. Deng Zhuang South Rd, Hai Dian District, Beijing, 100094, PR China
Abstract:We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.
Keywords:All-inkjet printed devices  Organic electronics  Operational stability  Ageing
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