Mechanical stress field assisted charge de-trapping in carbon doped oxides |
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| Affiliation: | 1. Department of Mechanical & Nuclear Engineering, The Pennsylvania State University, University Park, PA 16802, USA;2. Logic Technology Development, Intel Corporation, Hillsboro, OR 97124, USA;1. Satellite & Wireless Convergence Research Department, Electronics and Telecommunications, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Republic of Korea;2. Ace Technology, 237, Namdongseo-ro, Namdong-gu, Incheon 405-849, Republic of Korea;1. Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong;2. Lightning Optoelectronic Technology (SZ) Co., Ltd., Shenzhen, China;1. Integrated Surface Technologies, Inc., Menlo Park, CA 94025, USA;2. School for the Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287-6106, USA;1. School of Reliability and Systems Engineering, Beihang University, Beijing 100191, China;2. Wolfson School of Mechanical and Manufacturing Engineering, Loughborough University, Leicestershire LE11 3TU, UK;3. Science and Technology on Reliability and Environmental Engineering Laboratory, Beijing 100191, China |
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| Abstract: | Leakage current and dielectric breakdown effects are conventionally studied under electrical fields alone, with little regard for mechanical stresses. In this letter, we demonstrate that mechanical stress can influence the reliability of dielectrics even at lower field strengths. We applied tensile stress (up to 8 MPa) to a 33% porous, 504 nm thick carbon doped oxide thin film and measured the leakage current at constant electrical fields (up to 2.5 MV/cm). The observed increase in leakage current at relatively low electric fields suggests that mechanical stress assists in trap/defect mediated conduction by reducing the energy barrier potential to de-trap charges in the dielectric. |
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| Keywords: | Leakage current Mechanical stress Schottky emission Poole–Frenkel conduction Dielectric breakdown |
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