Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections |
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| Affiliation: | 1. Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;2. Toshiba Material Co., LTD, 8, Shinsugita-Cho, Isogo-Ku, Yokohama 235-8522, Japan;3. Frontier Research Center, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;1. Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Bahrain;2. Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503, Bahrain |
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| Abstract: | Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal–oxide–semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices’ performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing. |
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| Keywords: | Carbon nanotubes (CNTs) Carbon nanotube field-effect transistors (CNFETs) CNFET manufacturing imperfections CNFET variability and reliability |
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