A novel mechanical diced trench structure for warpage reduction in wafer level packaging process |
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| Affiliation: | 1. State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (CAS), Shanghai 200050, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;1. Amirkabir University of Technology, Tehran, Iran;2. Shahid Bahonar University of Kerman, Kerman, Iran;3. School of Computer Science, Institute for Research in Fundamental Sciences (IPM), Tehran, Iran;1. Department of Naval Architecture and Ocean Engineering, Graduate School of Chosun University, Gwangju 501-759, Republic of Korea;2. Department of Naval Architecture and Ocean Engineering, Chosun University, Gwangju 501-759, Republic of Korea;3. Plant R & D Division, Research Institute of Industrial Science & Technology, Ulsan 683-420, Republic of Korea;1. State Key Laboratory of Functional Materials for Informatics and Shanghai Center for Superconductivity, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China;3. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;1. Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China;2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No. 865, Changning Road, Shanghai, 200050, China |
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| Abstract: | The wafer warpage problem, mainly originated from coefficient of thermal expansion mismatch between the materials, becomes serious in wafer level packaging as large diameter wafer is adopted currently. The warpage poses threats to wafer handling, process qualities, and can also lead to serious reliability problems. In this paper, a novel mechanical diced trench structure was proposed to reduce the final wafer warpage. Deep patterned trenches with a depth about 100 μm were fabricated in the Si substrate by mechanical dicing method. Both experiment and simulation approaches were used to investigate the effect of the trenches on the wafer warpage and the influence of the geometry of the trenches was also studied. The results indicate that, by forming deep trenches, the stress on the individual die is decoupled and the total wafer warpage could be reduced. The final wafer warpage is closely related to the trench depth and die width. Trenched sample with a depth of 100 μm can decrease the wafer warpage by 51.4%. |
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| Keywords: | Wafer warpage Wafer level packaging Trench structure |
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