Analysis of dielectric breakdown in CoFeB/MgO/CoFeB magnetic tunnel junction |
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| Affiliation: | 1. Department of Physics, University of Azad Jammu & Kashmir, 13100 Muzaffarabad, Pakistan;2. Thin Films and Physics of Nanostructures, Department of Physics, Bielefeld University, P.O. Box 100131, 33501 Bielefeld, Germany;1. State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, PR China;2. State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130023, PR China;3. Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, PR China;1. University of Veracruz, Xalapa, Veracruz, Mexico;2. Dept. of Electronic Engineering, National Institute for Astrophysics, Optics and Electronics-INAOE, Puebla, Mexico;1. Wolfson School of Mechanical and Manufacturing Engineering, Loughborough University, Loughborough LE11 3TU, UK;2. GE Aviation Systems-Newmarket, 351 Exning Road, Newmarket, Suffolk CB8 0AU, UK;1. Dept. of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;2. Dept. of Electrical Engineering, National Central University, Jhongli, Taiwan, ROC;1. Computer Science & Engineering, Indian Institute of Technology, Indore, India;2. Electrical & Computer Engineering, Ryerson University, Toronto, Canada |
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| Abstract: | The time-dependent dielectric breakdown has been investigated in a series of nominally identical Co–Fe–B/MgO/Co–Fe–B junctions by voltage ramp experiments. The results divulge that the breakdown voltage strongly depends on the polarity of the applied voltage, junction area, ramp speed and the annealing temperature. Magnetic tunnel junctions (MTJs) with positive bias on the top electrode show higher breakdown voltage than MTJs with negative bias. We found that there is a significant decrease in the breakdown voltage when the annealing temperature is increased above 350 °C. The experimental data can be described by different specific forms of breakdown probability functions which lead to different extrapolation of life time of junctions. |
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| Keywords: | MTJs Dielectric reliability MTJ breakdown |
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