An analytical avalanche breakdown model for double gate MOSFET |
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| Affiliation: | 1. Department of Statistics, Alpen-Adria-Universität Klagenfurt, Klagenfurt, Austria;2. Infineon Technologies Austria AG, Villach, Austria;1. Department of Applied Physics, Gautam Buddha University, Greater Noida, 201308, India;2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India;1. School of Reliability and Systems Engineering, Beihang University, Beijing 100191, China;2. Avic Aviation Motor Control System Institute, Wuxi 214000, China;3. Center for Advanced Life Cycle Engineering (CALCE), University of Maryland, USA;1. School of Electrical and Computer Engineering, University of Tehran, Iran;2. Department of Electrical Engineering, Shahed University, Iran;3. Department of EE-Systems, University of Southern California, United States |
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| Abstract: | An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μeff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson’s equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model. |
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| Keywords: | DG MOSFET Avalanche breakdown model Channel length modulation Effective mobility model |
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