磁控溅射YSZ薄膜的激光损伤阈值

利用射频磁控溅射方法在不同衬底上制备出掺Y2O3 8 %的YSZ薄膜, 用X射线衍射、原子力显微镜(AFM)、扫描电子显微镜和透射光谱测定薄膜的结构、表面特性和光学性能, 研究了退火对薄膜结构和光学性能的影响。结果表明：随着退火温度的升高, 薄膜结构依次从非晶到四方相再到四方和单斜混合相转变, AFM分析显示薄膜表面YSZ颗粒随退火温度升高逐渐增大, 表面粗糙度相应增大, 晶粒大小计算表明, 退火温度的提高有助于薄膜的结晶化, 退火温度从400 ℃到1100 ℃变化范围内晶粒大小从20.9 nm增大到42.8 nm; 同时根据ISO11254-1激光损伤测试标准对光学破坏阈值进行了测量, 发现与其他电子束方法制备的YSZ薄膜损伤阈值结果比较, 溅射法制备的薄膜损伤阈值有了一定程度的提高。

Laser Induced Damage Threshold of YSZ Films Prepared by RF Magnetron Sputtering

In this study, yttrium stabilized zirconia films (ZrO2(1-0.08)Y2O3(0.08)) have been prepared by R.F. magnetron sputtering evaporation on different types of substrates. The film properties such as structure, surface properties, optical characters are studied by XRD, AFM, SEM and spectrophotometer respectively. The effect of annealing on the structure and optical properties is investigated. The results indicate the film structure undergoes from amorphous to tetragonal phase then ultimately to tetragonal and monoclinic phase with the increase of annealing temperature. AFM analysis shows the size of YSZ particles enlarges with the increase of temperature and the surface roughness is also increased. XRD results show the crystallization is accelerated with the annealing temperature. The crystal size is increased from 20.9 nm of 400 ℃ to 42.8 nm of 1100 ℃. Then the film damage threshold is measured with a nanosecond laser according to the ISO11254-1 standard. The results indicate the films structure has great influence on the laser induced damage thresholds. Compared with the results reported by EB evaporation method, the damage threshold of magnetron sputtering has been raised with a certain extent.