Demonstration of Pm-147 GaN betavoltaic cells

Two GaN p-(i)-n diodes were designed and fabricated,and their electrical performances with ~(63)Ni and ~(147)Pm plate sources were compared.The results showed that the diodes with ~(147)Pm had better electrical performances,with a short-circuit current(I_(sc)) of 59 nA,an open-circuit voltage(V_(oc)) of 1.4 V,and a maximum power(P_(max))of 49.4 nw.The ways to improve the electrical performances are discussed,including appropriate increase of the i-GaN thickness.