Bulk property of 1/f noise for piezoresistive Ni/Cr thin films in pressure sensors on flexible substrate |
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Authors: | Moinuddin Ahmed Donald P Butler |
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Affiliation: | 1. Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX, USA
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Abstract: | In the current paper, we report the 1/f noise measurement of nichrome Ni/Cr (80/20 %) thin films for two types of pressure sensors: relative pressure sensors and absolute pressure sensors. The normalized Hooge coefficient for nichrome thin film was found to be 1.89 × 10?10 for the relative pressure sensors and 4.64 × 10?11 for the absolute pressure sensors. We demonstrated that the normalized Hooge coefficient multiplied by the volume of the thin film become constant regardless of the sensor types and discuss the complexities arise for the miniaturization of MEMS sensors due to the bulk noise properties of piezoresistive thin films. |
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