The influence of constructive parameters on the threshold voltage of nanodimensional p-Channel SOI MOS transistors |
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| Authors: | B K Petrov A A Krasnov |
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| Affiliation: | 1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394893, Russia
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| Abstract: | The influence of the thickness of the silicon film and hole concentration in the p-channel nanodimensional MOS transistor based on the SOI structure is considered. The formulas for the computation of these dependences are derived and graphic dependences are presented. |
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