| ZnO薄膜非线性光学特性的实验研究 |
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| 引用本文： | 刘成有,宁丹,B.P.Zhang,Y.Segawa. ZnO薄膜非线性光学特性的实验研究[J]. 光学精密工程, 2005, 13(3): 265-271 |
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| 作者姓名： | 刘成有 宁丹 B.P.Zhang Y.Segawa |
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| 作者单位： | 通化师范学院,物理系,吉林,通化,134002;Photodynamics Research Center,The Institute of Physical and Chemical Research, RIKEN, 519-1399 Aoba, Aramaki, Aoba-ku,Sendai 980-0845, Japan;通化师范学院,物理系,吉林,通化,134002;Photodynamics Research Center,The Institute of Physical and Chemical Research, RIKEN, 519-1399 Aoba, Aramaki, Aoba-ku,Sendai 980-0845, Japan |
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| 摘 要： | 利用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上生长一层高质量的ZnO薄膜。为了考察沉积温度对样品的非线性特性的影响,在200~500 ℃生长了一系列ZnO薄膜。用X射线衍射谱(XRD)及扫描电镜(SEM)对样品结构进行了评价。以Nd:YAG激光器输出的1.06 μm的激光为基频光,对ZnO薄膜样品的二阶及三阶非线性光学特性进行了实验研究。实验发现,对于250 ℃沉积温度的样品有较强的非线性效应,实验测得的二阶非线性极化张量 χ (2)ZZZ=9.2 pm/V, 三阶有效非线性系数χ(3)=5.28×10－20 m2/V2。
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| 关 键 词： | 二次谐波振荡 金属有机化学气相沉积 二阶极化率 三阶极化率 沉积温度 |
| 文章编号： | 1004-924X(2005)03-0265-07 |
| 收稿时间： | 2005-03-14 |
| 修稿时间： | 2005-03-14 |
Nonlinear optical properties of ZnO films deposited by metalorganic chemical vapor deposition (MOCVD) technique |
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| LIU Cheng-you,NING Dan,B.P.Zhang,Y.Segawa. Nonlinear optical properties of ZnO films deposited by metalorganic chemical vapor deposition (MOCVD) technique[J]. Optics and Precision Engineering, 2005, 13(3): 265-271 |
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| Authors: | LIU Cheng-you NING Dan B.P.Zhang Y.Segawa |
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| Affiliation: | 1. Physics Department, Tonghua Normal College, Tonghua 134002, China;
2. Photodynamics Research Center, The Institute of Physical and Chemical Research, RIKEN, 519-1399 Aoba, Aramaki, Aoba-ku,Sendai 980-0845, Japan |
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| Abstract: | The nonlinear optical properties of ZnO thin films deposited by metalorganic chemical vapor deposition (MOCVD) technique are investigated. ZnO films are deposited on sapphire substrates at 200~500 ℃. XRD and SEM are used to investigate the crystalline quality. 1.06 μm wavelength beam output from a Nd:YAG laser is used as fundamental beam. The second-order and third-order susceptibility is studied. By comparing the second harmonic signal generated in a series of ZnO films with different growth temperatures, we conclude that a significant part of second harmonic (SH) signal is generated at the film deposited at appropriate temperature. The dependence of SH on the deposited temperatures is discussed. The second order susceptibility tensor χ (2)zzz=9.2 pm/V and third-order susceptibility χ(3) = 5.28×10－20 m2/V2 are deduced for a film deposited at 250 ℃. |
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| Keywords: | second harmonic generation metalorganic chemical vapor deposition (MOCVD) second order susceptibility third order susceptibility deposition temperature |
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