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Room-temperature CO2 sensing using metal-insulator-semiconductor capacitors comprising atomic-layer-deposited La2O3 thin films
Authors:K.B. JineshAuthor Vitae  V.A.T. DamAuthor VitaeJ. SwertsAuthor Vitae  C. de NooijerAuthor VitaeS. van ElshochtAuthor Vitae  S.H. BrongersmaAuthor VitaeM. Crego-CalamaAuthor Vitae
Affiliation:a Holst Centre/imec-Netherlands, PO Box 8550, 5605 KN, Eindhoven, The Netherlands
b imec, Kapeldreef 75, B-3001 Leuven, Belgium
Abstract:Room temperature detection of CO2 using metal-insulator-silicon (MIS) devices is reported. These devices comprise atomic layer deposited La2O3 thin films as the gas-sensitive dielectric layer and Pt, Pt/Ta and Al as the electrodes. Physical mechanisms that lead to the detection of CO2 at room temperature are discussed.
Keywords:CO2 sensing   Atomic layer deposition   La2O3 thin films
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