Room-temperature CO2 sensing using metal-insulator-semiconductor capacitors comprising atomic-layer-deposited La2O3 thin films期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Room-temperature CO₂ sensing using metal-insulator-semiconductor capacitors comprising atomic-layer-deposited La₂O₃ thin films

Authors:	KB JineshAuthor Vitae VAT DamAuthor VitaeJ SwertsAuthor Vitae C de NooijerAuthor VitaeS van ElshochtAuthor Vitae SH BrongersmaAuthor VitaeM Crego-CalamaAuthor Vitae

Affiliation:	^a Holst Centre/imec-Netherlands, PO Box 8550, 5605 KN, Eindhoven, The Netherlands ^b imec, Kapeldreef 75, B-3001 Leuven, Belgium

Abstract:	Room temperature detection of CO₂ using metal-insulator-silicon (MIS) devices is reported. These devices comprise atomic layer deposited La₂O₃ thin films as the gas-sensitive dielectric layer and Pt, Pt/Ta and Al as the electrodes. Physical mechanisms that lead to the detection of CO₂ at room temperature are discussed.

Keywords:	CO₂ sensing Atomic layer deposition La₂O₃ thin films
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