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| Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy （XPS） and atomic force microscopy （AFM） | |
| 作者姓名： | PAN J. S. LIU R. S. TOK E. S. |
| 作者单位： | [1]Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 [2]Department of Physics, National University of Singapore, Kent Ridge, Singapore 119260 |
| 摘 要： | In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion behaviour as well as morphology evolution during annealing on both H-terminated and clean Si（001） and Si（lll） surfaces. From in-situ X-ray photoelectron spectroscopy （XPS） investigation, ＂Co-Si＂ reaction appears to occur on both H-terminated and clean surfaces at room temperature （RT） and the silicide crystallinity is improved upon annealing. Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed island growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentration decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behaviour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy （AFM） shows that the islands formed on Si（001） surface after annealing at 700℃ are elongated with growth directions alternate between the two perpendicular 110 ] and 110] directions. Triangular islands are observed on Si （111） surface. |
| 关 键 词： | 钴 硅 金属-半导体界面反应 X射线光电子光谱学 原子力显微镜方法 表面形态 |
| 收稿时间： | 2006-07-20 |
Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) |
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| PAN J. S. LIU R. S. TOK E. S..Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)[J].Nuclear Science and Techniques,2006,17(4):202-211. | |
| Authors: | PAN J S LIU R S TOK E S |
| Affiliation: | 1. Institute of Materials Research and Engineering,3 Research Link, Singapore 117602 2. Department of Physics, National University of Singapore, Kent Ridge, Singapore 119260 3. Institute of Materials Research and Engineering,3 Research Link, Singapore 117602;Department of Physics, National University of Singapore, Kent Ridge, Singapore 119260 |
| Abstract: | In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion behaviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) surfaces. From in-situ X-ray photoelectron spectroscopy (XPS) investigation, "Co-Si" reaction appears to occur on both H-terminated and clean surfaces at room temperature (RT) and the silicide crystallinity is improved upon annealing.Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed island growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentration decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behaviour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy (AFM) shows that the islands formed on Si(001) surface after annealing at 700 ℃ are elongated with growth directions alternate between the two perpendicular (-1)10] and 110] directions. Triangular islands are observed on Si(111) surface. |
| Keywords: | Cobalt Silicon Metal-semiconductor interfacial reaction Hydrogen termination Growth mode Diffusion Surface morphology XPS AFM |
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