Characterization of nanostructured photosensitive (NiS)x(CdS)(1−x) composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route

Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS)_x(CdS)_(1−x) with variable composition (x = 1-0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS)_x(CdS)_(1−x) films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS)_x(CdS)_(1−x) thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS)_x(CdS)_(1−x) film decrease with improvement in photosensitive nature.