Characterization of nanostructured photosensitive (NiS)x(CdS)(1−x) composite thin films grown by successive ionic layer adsorption and reaction (SILAR) route |
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Authors: | A.U. Ubale A.N. Bargal |
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Affiliation: | Nanostructured Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, Amravati 444604, Maharashtra, India |
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Abstract: | Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS)x(CdS)(1−x) with variable composition (x = 1-0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS)x(CdS)(1−x) films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS)x(CdS)(1−x) thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS)x(CdS)(1−x) film decrease with improvement in photosensitive nature. |
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Keywords: | A. Composites B. Chemical synthesis D. Electrical properties D. Optical properties |
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