Effect of gas flow rate on surface morphology and crystal quality of ZnTe epilayers grown on GaAs substrates |
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| Authors: | Qixin Guo Masaki Nada Katsuhiko Saito Mitsuhiro Nishio |
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| Affiliation: | a Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
b Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan |
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| Abstract: | The effect of gas flow rate on surface morphology and crystal quality of ZnTe layers grown on the (1 0 0) GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy with dimethylzinc and diethyltelluride as the source materials was investigated. The surface morphology of the ZnTe epilayers is significantly improved with increasing the total gas flow rate. X-ray rocking curve and photoluminescence measurements indicate that the total gas flow rate plays a vital role in the growth characteristics of the ZnTe epilayers, and the ZnTe epilayer with best crystal quality is obtained at the total gas flow rate around 300 standard cubic centimeters per minute (sccm) in this work. |
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| Keywords: | A Semiconductor B Epitaxial growth C Atomic force microscopy D Luminescence |
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