SiGe drift base bipolar transistor with self-aligned selectiveCVD-tungsten electrodes |
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Authors: | Ugajin M Kunii Y Kuwagaki M Konaka S |
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Affiliation: | NTT LSI Labs., Kanagawa; |
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Abstract: | A new device and process technology is developed for high-speed SiGe epitaxial base transistors. A 60-nm SiGe epitaxial base and the selectively ion-implanted collector (SIC) structure enhance the cutoff frequency to about 40 GHz. Base resistance is minimized to 165 Ω (emitter area: 0.2×3 μm2), and an fMAX of 37.1 GHz is achieved by employing 0.2-μm EB lithography for the emitter window, selective CVD tungsten for the base electrode and a self-aligned oxide side wall for the emitter-to-base separation. Circuit simulations predict that this device could reduce the ECL gate delay to below 20 ps |
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