Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers |
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Authors: | Rajni Kiran Shubhrangshu Mallick Suk-Ryong Hahn T. S. Lee Sivalingam Sivananthan Siddhartha Ghosh P. S. Wijewarnasuriya |
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Affiliation: | (1) Microphysics Laboratory, University of Illinois at Chicago, 60607-7059 Chicago, IL;(2) Photonics and Spintronics Laboratory, University of Illinois at Chicago, 60607 Chicago, IL;(3) U.S. Army Research Laboratory, 20783 Adelphi, MD |
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Abstract: | The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition. |
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Keywords: | CdTe minority carrier lifetime 1/f noise passivation surface recombination velocity ZnS |
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