| 铟掺杂氧化锌纳米线的制备及光致发光特性 |
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| 引用本文： | 刘炳胜,韩仁学. 铟掺杂氧化锌纳米线的制备及光致发光特性[J]. 硅酸盐学报, 2010, 38(2): 163-166 |
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| 作者姓名： | 刘炳胜 韩仁学 |
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| 作者单位： | 黑龙江科技学院数力系;黑龙江科技学院实训中心,哈尔滨,150027 |
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| 摘 要： | 采用化学气相沉积法合成了高质量的铟(In)掺杂的氧化锌单晶纳米线。利用扫描电子显微镜、透射电子显微镜和粉末X射线衍射对其形貌与结构进行了表征。结果表明:纳米线的直径约为30nm,粗细均匀,具有六角纤锌矿结构。在纳米线的变温光致发光光谱中,由于In的掺杂,只观察到紫外发射峰,未见可见光发射峰;低温下的紫外发射来自于施主-受主对(donor-acceptor pair,DAP)的跃迁。随着温度的升高,DAP的跃迁逐渐减弱,在高于140K时,紫外发射来自于自由电子到中性受主(free-electron-to-neutral-acceptor,eA0)的跃迁。
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| 关 键 词： | 铟掺杂氧化锌 纳米线 光致发光 化学气相沉积 |
PREPARATION OF In-DOPED ZnO NANOWIRE AND THEIR PHOTOLUMINESCENCE |
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| LIU Bingsheng,HAN Renxue. PREPARATION OF In-DOPED ZnO NANOWIRE AND THEIR PHOTOLUMINESCENCE[J]. Journal of The Chinese Ceramic Society, 2010, 38(2): 163-166 |
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| Authors: | LIU Bingsheng HAN Renxue |
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| Affiliation: | 1.Department of Mathematics and Mechanic;2.Center for Engineering Training and Basic Experimentation;Heilongjiang Institute of Science and Technology;Harbin 150027;China |
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| Abstract: | The single crystalline indium (In)-doped ZnO nanowire (ZNW) with large-scale and good quality was fabricated by a chemical vapor deposition method.The morphology and structure of the ZNW were investigated by scanning electron microscopy,transmission electron microscopy and powder X-ray diffraction.The results show that the diameter of the nanowire is uniform and about 30 nm.The nanowire has the hexagonal wurtzite ZnO phase structure.Only a broad ultraviolet (UV) emission peak was observed in its photolumine... |
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| Keywords: | indium-doped zinc oxide nanowire photoluminescence chemical vapor deposition |
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