A new etchant system,K2Cr2O7-H2SO4-HCl,for GaAs and InP |
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| Authors: | S Adachi H Kawaguchi G Iwane |
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| Affiliation: | (1) Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashinoshi, 180 Tokyo, Japan |
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| Abstract: | A new K2Cr2O7-H2SO4-HCl system has been developed that is particularly suitable for use in etching solutions of GaAs and InP. This system provides high quality etched surfaces without any undesirable roughness or etch pits. It has been found that the etching rate can be controlled by changing the etchant component proportions. This is especially the case with HCl. This leads to no change of surface quality. Vertical walls, and mesa-shaped structures have been formed on etching profiles of (001) GaAs by stripes parallel to the 110], and ¯110] directions, respectively. The mesa-shaped profiles have been formed for (001) InP in both the 110] and ¯110] directions. The solution does not erode photoresist masks and is thereby attractive for a variety of device applications. |
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