质子辐照制备HgCdTe光电二极管的性能研究

用质子辐照ｐ型碲镉汞材料的方法成功地制备了ｎ－ｏｎ－ｐ型短波与中波光伏器件．其中中波器件的截止波长为６．５ｍｍ，黑体探测率达２．３ｘ１０１０ｃｍＨｚ１／２Ｗ－１，量子效率为２８％，其中Ｒ０Ａ达１５７·ｃＭ２。Ｃ－Ｖ特性研究发现其为突变结。噪声频谱表明在低频（＜３００Ｈｚ）时主要由１／ｆ噪声限制，在中频和高频时主要是白噪声限制。对辐照前后材料和器件的截止波长变化亦作出了初步解释。短波器件的电流电压特性表明器件在室温可承受１５Ｖ的反向偏压。

PERFORMANCE OF HgCdTe PHOTODIODES PRODUCED BY PROTON IRRADIATION

The n-p junction short-wavelength and mid-wavelength Hg1-x CdxTe photovoltaic detectors havebeen fabricated using proton irradiation to create the n-type layer, with the cut-off wavelength range1.6~ 7.0m. The blackbody detectivity at 6.75m was 2.3 x 1010 cmHz1/2W-1, the quantum efficiencyat the peak was 28%, and the R0A product was 157 cm2. It is obtained to be an abrupt junctionthrough capacitance-voltage characteristic measurements . The noise frequency spectra show that 1/fnoise in low frequency (< 300Hz) and thermal noise in middle and high frequency is mainly concerned.At the same time the changes of cut-off wavelength between materials and devices before and afterirradiation were also explained. For short wavelength photodiode it can sustain up to 15V reversevoltage at room temperature.