Integrated electrically tuned X-band power amplifier utilizing Gunn and IMPATT diodes

A totally integrated X-band power amplifier for FM and PM communication system applications having 1-W output power and 30-dB gain is described. The amplifier consists of two electrically tuned injection-locked oscillator stages taht are tunable over a 500-MHz range with 250-MHz minimum locking bandwidth. A Gunn diode is utilized in the first stage and a silicon IMPATT diode in the second stage oscillator for the best overall FM noise, AM/PM conversion, output power, and efficiency. The FM noise and AM/PM conversion of the separate stages are presented in relation to overall amplifier performance. The amplifier design includes a combined power monitor and `out-of-lock' detection circuit. In addition, temperature-compensated current and voltage regulators and automatic interface circuitry to shut off the amplifier when out of lock occurs are described. Temperature compensation for the free-running frequency of each stage over the temperature and frequency range is discussed.