Self-aligned normally off GaAs MESFET using Sn-doped SiO2 glass |
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| Authors: | Ishii Y. Kawasaki Y. |
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| Affiliation: | NTT, Electrical Communication Laboratories, Musashino, Japan; |
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| Abstract: | An improved normally-off GaAs MESFET was fabricated by employing Sn-doped SiO2 glass, which was used as an Sn-diffusant for making the N+ layer. An N+ layer with Rs=100$/? and Ns=3×1013 cm?2 was successfully obtained under 800°C, 20 min diffusion conditions. A new self-alignment technique, using doped-SiO2 film, provided a high performance normally-off GaAs FET. |
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