| 用多光束干涉实现纳米级阵列图形的长焦深光刻 |
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| 引用本文： | 张锦,冯伯儒,郭永康.用多光束干涉实现纳米级阵列图形的长焦深光刻[J].光电工程,2004,31(3):8-11. |
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| 作者姓名： | 张锦 冯伯儒 郭永康 |
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| 作者单位： | 中国科学院光电技术研究所微细加工光学技术国家重点实验室,四川,成都,610209;四川大学物理系,四川,成都,610064;中国科学院光电技术研究所微细加工光学技术国家重点实验室,四川,成都,610209;四川大学物理系,四川,成都,610064 |
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| 基金项目： | 国家自然科学基金资助项目(60276043) |
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| 摘 要： | 用多束相干光适当组合干涉曝光,得到的图形与基片在干涉场内的纵向位置z无关,与x、y位置呈周期关系,光的相干长度对应传统光学光刻的焦深。该方法适合大尺寸基片上纳米级孔、锥阵列图形的制作。模拟了双光束双曝光、三光束单曝光和四光束单曝光的干涉场光强分布,用波长为441.6nm的激光曝光得到尺寸为200nm的孔阵和点阵的图形。
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| 关 键 词： | 干涉光刻 多光束干涉 焦深 阵列图形 |
| 文章编号： | 1003-501X(2004)03-0008-04 |
| 收稿时间： | 2003/12/2 |
Long focal depth photolithography for obtaining nanometer array patterns with multi-beam interference |
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| ZHANG Jin,FENG Bo-ru,GUO Yong-kang.Long focal depth photolithography for obtaining nanometer array patterns with multi-beam interference[J].Opto-Electronic Engineering,2004,31(3):8-11. |
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| Authors: | ZHANG Jin FENG Bo-ru GUO Yong-kang |
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| Affiliation: | ZHANG Jin1,2,FENG Bo-ru1,GUO Yong-kang2 |
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| Abstract: | Through combination of multi-beam coherent light for interference exposure with, the obtained patterns are independent of the longitudinal position z of substrate and they appear a periodic relation with position x and position y in the interference field. The method is suitable for fabricating nanometer holes and cone array patterns on large-sized substrate. The light intensity distributions of dual-exposure with two beam interference, single exposure with tri-beam interference and single exposure with four-beam interference are simulated. The hole-arrays and point arrays with a size of 200nm are obtained through exposure with a light source 441.6nm wavelength. |
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| Keywords: | Interference photolithography Multi-beam interference Focus depth Array patterns |
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