An abrupt InP-GaInAs-InP DHBT |
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| Authors: | Elias DC Kraus S Gavrilov A Cohen S Buadana N Sidorov V Ritter D |
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| Affiliation: | Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel; |
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| Abstract: | We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with N/sub D/=3/spl times/10/sup 19/ cm/sup -3/. The obtained f/sub T/ and f/sub MAX/ values at a current density of 1 mA//spl mu/m/sup 2/ are comparable to the values reported for DHBTs with a grade layer between the base and the collector. |
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