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Contact resistance characteristics with AlSi alloy metallization
Affiliation:1. State Key Laboratory of Solidification Processing, International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi''an 710072, China;2. Atomistic Simulations, Italian Institute of Technology, Via E. Melen 83, Genoa 16152, Italy
Abstract:Contact resistance characteristics of n+ Si shallow junctions metallized by sputtering an AlSi 2% alloy were investigated for different contact window sizes varying from 2 to 8 μm. The increase in the contact resistance with reducing contact area is measured employing Kelvin test structure. The effect of AlSi microstructure, silicon precipitation and annealing cycle on the contact resistance is discussed.
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