| 高性能1mm AlGaN/GaN功率HEMTs研制 |
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| 引用本文： | 邵刚,刘新宇,和致经,刘键,魏珂,陈晓娟,吴德馨,王晓亮,陈宏.高性能1mm AlGaN/GaN功率HEMTs研制[J].半导体学报,2005,26(1):88-91. |
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| 作者姓名： | 邵刚 刘新宇 和致经 刘键 魏珂 陈晓娟 吴德馨 王晓亮 陈宏 |
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| 作者单位： | [1]中国科学院微电子研究所,北京100029 [2]中国科学院半导体研究所,北京100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划);中国科学院知识创新工程项目 |
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| 摘 要： | 报道了基于蓝宝石衬底的高性能1mm AlGaN/GaN HEMTs功率器件.为了提高微波功率器件性能，采用新的欧姆接触和新型空气桥方案．测试表明，器件电流密度为0.784A/mm，跨导197mS/mm，击穿电压大于40V，截止态漏电较小，1mm栅宽器件的单位截止频率达到20GHz，最大振荡频率为28GHz，功率增益为11dB，功率密度为1.2W/mm,PAE为32%,两端口阻抗特性显示了在微波应用中的良好潜力．
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| 关 键 词： | 微波功率 单位截止频率 |
| 文章编号： | 0253-4177(2005)01-0088-04 |
| 修稿时间： | 2003年12月30日 |
Development of High Performance 1mm Gate Width AlGaN/GaN Power HEMTs |
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| Shao Gang ,Liu Xinyu ,He Zhijing ,Liu Jian ,Wei Ke ,Chen Xiaojuan ,Wu Dexin ,Wang Xiaoliang ,and Chen Hong.Development of High Performance 1mm Gate Width AlGaN/GaN Power HEMTs[J].Chinese Journal of Semiconductors,2005,26(1):88-91. |
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| Authors: | Shao Gang Liu Xinyu He Zhijing Liu Jian Wei Ke Chen Xiaojuan Wu Dexin Wang Xiaoliang and Chen Hong |
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| Affiliation: | Shao Gang 1,Liu Xinyu 1,He Zhijing 1,Liu Jian 1,Wei Ke 1,Chen Xiaojuan 1,Wu Dexin 1,Wang Xiaoliang 2,and Chen Hong 3 |
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| Abstract: | An high performance AlGaN/GaN power heterostructure field effect transistors(HEMTs) on sapphire substrate with total gate width 1mm is reported.New ohmic contact structure and air-bridge are employed to improve microwave power performance.A saturated current density of 0.784A/mm,a peak transconductance of 197mS/mm,a break-down voltage of up to 40V and a small leakage current under cut-off state are obtained.The 1mm gate width power device also displays a unit cutoff frequency(f T) of 20GHz and a maximum oscillation frequency f max of 28GHz,and also an output power 1.2W,a power gain 11dB,a PAE 32% in 2GHz.Port impedance characteristics show the potential for the applications of microwave field. |
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| Keywords: | AlGaN/GaN HEMT |
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