| S波段单片低噪声放大器与混频器 |
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| 摘 要： | 南京电子器件研究所最近利用76mmGaAsMMIC工艺线研制出数种单片电路。封面照片为S波段低噪声放大器与混频器单胞及大圆片照片，初步微波性能如下：放大器：增益＞22dB；噪声系数＜1．5dB；输入输出驻波＜1．5混频器：变频增益＞4dB；各端口驻波＜1．5；各端口隔离度＞24dB电源：±5VS波段单片低噪声放大器与混频器
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S－hand MMIC LNA and Mixer |
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| Abstract: | NEDI has developed several MMICs in its 3 inch GaAs MMIC processing line． Shown onthe front cover are the photographs of single chip and 3 inch wafer of S－band MMIC LNAand mixer． The microwave performances are as follows： LNA：G＞22 dB；NF＜1．5 dB；VSWR＜1．5 MIX6f：Conversion gain＞4 dB；Each port VSWR＜1．5；All ports isolation＞24dBSupply：± 5 V |
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