Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu3Ti4O12 ceramics |
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| Authors: | Zhanhui Peng Di Wu Pengfei Liang Xiaobin Zhou Jitong Wang Jie Zhu Xiaolian Chao Zupei Yang |
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| Affiliation: | 1. Key Laboratory for Macromolecular, Science of Shaanxi Province, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Laboratory for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, Shaanxi, China;2. School of Physics and Informations Technology, Shaanxi Normal University, Xi'an, Shaanxi, China |
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| Abstract: | Dielectric materials with ultrahigh permittivity are attracting attention due to the increasing demand for these types of materials for microelectronics and energy storage applications. In this work, we successfully synthesized Zn-doped CdCu3Ti4O12 (CdCTO) ceramics with low dielectric loss and large permittivity via an ordinary mixed-oxide technique. Remarkably, at a Zn doping level of 0.10, a CdCu2.9Zn0.1Ti4O12 ceramic exhibited both decreased dielectric loss tangent of ~0.058 and large dielectric permittivity > 4.0 × 104, as well as a good frequency stability over a wide frequency range from 40 Hz to 106 Hz. The high dielectric performance was attributed to the enhanced grain boundary resistance and internal barrier layer capacitor (IBLC) effect due to the fine and uniform grains that formed upon Zn doping. The findings reported in this work provide valuable insights into how to simultaneously realize a low dielectric loss and high permittivity in CdCTO and other related dielectric ceramics. |
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| Keywords: | complex impedance dielectric properties grain boundary resistance large permittivity low dielectric loss |
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