Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios |
| |
| Authors: | N Seki K Takakura T Suemasu F Hasegawa |
| |
| Affiliation: | Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan |
| |
| Abstract: | 1 0 0]-oriented β-FeSi2 films were grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE) with a deposited Si to Fe atomic ratio (Si/Fe ratio) varied from 1.6 to 2.8. It was found that the conduction type of the β-FeSi2 films changed from p- to n-type between the deposited Si/Fe=2.4 and 2.8. Rutherford Back Scattering (RBS) measurements revealed that the real Si/Fe ratio of β-FeSi2 is 2.0–2.1 for all the samples after 900°C annealing for 14 h, showing that stoichiometry of the grown films is almost satisfied even though the deposited Si/Fe ratio was away from stoichiometry. |
| |
| Keywords: | Author Keywords: Iron disilicide Conductivity Si/Fe ratio RBS |
| 本文献已被 ScienceDirect 等数据库收录！ |
