Theoretical study of the threshold characteristics of InGaN multiquantum well lasers

The threshold characteristics of InGaN multiquantum well lasers are investigated. A detailed analysis of the dependence of the threshold current on the quantum-well parameters and the temperature is performed. It is shown that, in comparison with long-wavelength lasers, InGaN lasers have a qualitatively different dependence of the threshold current on the quantum-well parameters (well width and number of quantum wells). The possibility of optimizing a InGaN laser structure is analyzed with the aim of improving the threshold characteristics and increasing the peak radiated power. Fiz. Tekh. Poluprovodn. 32, 843–848 (July 1998)