Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched
n-Al0.58Ga0.42N |
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| Authors: | MA Miller BH Koo KHA Bogart SE Mohney |
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| Affiliation: | (1) Department of Materials Science and Engineering, The Pennsylvania State University, 207A Steidle Building, University Park, PA 16802, USA;(2) The Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA;(3) Changwon National University, Changwon, Gyeongnam, 641-773, Korea;(4) Sandia National Laboratories, Albuquerque, NM 87185, USA |
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| Abstract: | Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received
and plasma-etched n-Al0.58Ga0.42N. The reaction depth of low-resistance V-based contacts to as-received n-Al0.58Ga0.42N is very limited, unlike previously reported Ti-based contacts to n-Al
x
Ga1−x
N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-Al0.58Ga0.42N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of
40 nm. To achieve a low contact resistance on plasma-etched n-Al0.58Ga0.42N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched
n-Al0.58Ga0.42N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer
at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the
metallization to the n-Al0.58Ga0.42N. The similarity in phase formation in the contacts to plasma-etched n-Al0.58Ga0.42N is likely the reason behind the similarity in specific contact resistances. |
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| Keywords: | AlGaN ohmic contact plasma etching vanadium |
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