|
|||||
|
|
Low-threshold 1.3 ?m GaInAsP/InP lasers grown by atmospheric-pressure MOVPE |
|
| Authors: | Rose B. Devoldere P. Mircea A. Robein D. Trotte M. |
| Affiliation: | Centre National d'Etudes des Télécommunications, Laboratoires de Bagneux, Paris, France; |
| Abstract: | Room-temperature pulsed operation has been achieved at and below 1.3 ?m for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.0 kA/cm2 (for a cavity length of 1000 ?m) have been obtained. |
| Keywords: | |