| 双极功率集成器件的优化 |
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| 引用本文： | 吴郁,王浩,程序,亢宝位.双极功率集成器件的优化[J].北京工业大学学报,2009,35(9). |
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| 作者姓名： | 吴郁 王浩 程序 亢宝位 |
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| 作者单位： | 北京工业大学,电子信息与控制工程学院,北京,100124;北京工业大学,电子信息与控制工程学院,北京,100124;北京工业大学,电子信息与控制工程学院,北京,100124;北京工业大学,电子信息与控制工程学院,北京,100124 |
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| 基金项目： | 北京市教育委员会科技发展计划面上项目(KM200510005022) |
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| 摘 要： | 以400 V双极功率集成器件(由BJT与p-i-n二极管以反并联方式集成在同一个芯片上构成)为例,通过仿真和实测分析,建立起基本概念和物理图像,阐明了集成功率器件中横向寄生晶体管所带来的影响,以及主晶体管与内二极管的不同间距又如何影响寄生晶体管所起作用等问题.最后给出了主晶体管与内二极管间距的优化设计值.这些为理解问题进而设计出主晶体管与内二极管之间新的隔离措施奠定了理论基础.
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| 关 键 词： | 双极功率集成器件 主晶体管 内二极管 漏电流 反向恢复时间 |
Optimization of the Power Bipolar Integrated Device |
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| WU Yu,WANG Hao,CHENG Xu,KANG Bao-wei.Optimization of the Power Bipolar Integrated Device[J].Journal of Beijing Polytechnic University,2009,35(9). |
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| Authors: | WU Yu WANG Hao CHENG Xu KANG Bao-wei |
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| Affiliation: | WU Yu,WANG Hao,CHENG Xu,KANG Bao-wei (College of Electronic Information , Control Engineering,Beijing University of Technology,Beijing 100124,China) |
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| Abstract: | Based on a 400 V power bipolar integrated device(BJT and a anti-parallel p-i-n diode integrated on the same chip) and through simulation and experimental test,some fundamental concepts and physical images were established concerning the influence of the parasitic lateral p-n-p transistor on the integrated device and the dependence of this influence on the distance between the main transistor and the internal diode.Finally,the optimized design of the above-mentioned distance was proposed.These provide a theo... |
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| Keywords: | power bipolar integrated device main transistor internal diode leakage current reverse recovery time |
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