| 高阻硅低温欧姆接触 |
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| 引用本文： | 李刚,沈复初,姚奎鸿,阙端麟. 高阻硅低温欧姆接触[J]. 半导体学报, 1988, 9(2): 208-210 |
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| 作者姓名： | 李刚 沈复初 姚奎鸿 阙端麟 |
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| 作者单位： | 浙江大学半导体材料研究所 杭州(李刚，沈复初，姚奎鸿)，浙江大学半导体材料研究所 杭州(阙端麟) |
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| 摘 要： | 提出用激光诱导扩散法在室温电阻率大于15,000(Ω·cm)的P型高阻硅上制备低温欧姆接触(77—300K).研究了激光参数对低温比接触电阻值的影响关系,结合诱导区表面热学性质的理论计算讨论了实验结果.比较了二种不同的铟焊引线方法.
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| 关 键 词： | 硅 欧姆接触 激光 |
Low Temperature Ohmic Contacts on High Resistivity Silicon |
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| Li Gang/Semiconductor Materials Institute,Zhejiang University,HangzhouShen Fuchu/Semiconductor Materials Institute,Zhejiang University,HangzhouYao Kuihong/Semiconductor Materials Institute,Zhejiang University,HangzhouQue Duanlin/Semiconductor Materials Institute,Zhejiang University,Hangzhou. Low Temperature Ohmic Contacts on High Resistivity Silicon[J]. Chinese Journal of Semiconductors, 1988, 9(2): 208-210 |
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| Authors: | Li Gang/Semiconductor Materials Institute Zhejiang University HangzhouShen Fuchu/Semiconductor Materials Institute Zhejiang University HangzhouYao Kuihong/Semiconductor Materials Institute Zhejiang University HangzhouQue Duanlin/Semiconductor Materials Institute Zhejiang University Hangzhou |
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| Abstract: | The method to employ the laser-induced diffusion is developed to make the low tempera-ture ohmic contacts (77-300 K) on high resistivity P-type silicon (the room temperature resis-tivity greater than 15,000 Ohm-cm).The effect of laser parameters on the low temperaturespecific contact resistance of ohmic contacts is discussed in combination with the theoretic calcu-lation of the laser-induced regions.Two different welding ways are compared. |
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| Keywords: | Silicon Ohmic contact Laser |
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