| 高效率808 nm激光器的数值模拟研究 |
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| 引用本文： | 赵懿昊,陈宏泰,陈国鹰,杨红伟,赵润,彭海涛.高效率808 nm激光器的数值模拟研究[J].半导体技术,2008,33(4):311-315. |
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| 作者姓名： | 赵懿昊 陈宏泰 陈国鹰 杨红伟 赵润 彭海涛 |
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| 作者单位： | 河北工业大学,信息工程学院,天津,300401;中国电子科技集团公司,第十三研究所,石家庄,050051;中国电子科技集团公司,第十三研究所,石家庄,050051;河北工业大学,信息工程学院,天津,300401 |
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| 摘 要： | 分析了提高激光器电光转换效率的几种途径,认为降低激光器工作电压、串联电阻和阈值电流可以提高激光器转换效率.分别对Ga0.5InP和AlxGaAs对称波导激光器进行了模拟,结果表明,AlxGaAs材料体系(AlxGaAs/AlxGaAs/InGaAsP)激光器的各种参数均优于Ga0.5InP材料体系((AlxGa)0.5InP/Ga0.5InP/InGaAsP)激光器,并在模拟的基础上制备出了相应的激光器.依据模拟结果和器件结果分析得出,增大波导层掺杂浓度可以降低激光器的工作电压和串联电阻;改变波导层组分为渐变值时可降低激光器阈值电流,从而增大激光器转换效率.
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| 关 键 词： | 激光器 材料体系 电光转换效率 串联电阻 阈值电流 |
| 文章编号： | 1003-353X(2008)04-0311-05 |
| 修稿时间： | 2007年12月27 |
Numerical Study for High Efficiency 808 nm Laser Diode |
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| Zhao Yihao,Chen Hongtai,Chen Guoying,Yang Hongwei,Zhao Run,Peng Haitao.Numerical Study for High Efficiency 808 nm Laser Diode[J].Semiconductor Technology,2008,33(4):311-315. |
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| Authors: | Zhao Yihao Chen Hongtai Chen Guoying Yang Hongwei Zhao Run Peng Haitao |
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| Affiliation: | Zhao Yihao1,2,Chen Hongtai2,Chen Guoying1,Yang Hongwei2,Zhao Run2,Peng Haitao1,2(1.Dept.Info.& Engi.,Hebei University of Technology,Tianjin 300401,China,2.The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | By analyzing the conditions which can increase the power conversion efficiency(PCE)of diode,it is found that decreasing the work voltage,serial resistance and the threshold current can increase the PCE.The simulations on Ga0.5InP and AlxGaAs symmetric waveguide laser diodes were carried out respectively.The results show that the parameters of AlxGaAs material system(InGaAsP quantum well sandwiched by AlxGaAs waveguide and cladding)are better than that of Ga0.5InP material system(InGaAsP quantum well with Ga... |
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| Keywords: | laser material system power conversion efficiency serial resistance threshold current |
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