The quantitative investigation of the lattice oxygen and grain edge oxygen on the thermal conductivity of aluminum nitride ceramics |
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| Affiliation: | 1. Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China;2. Shunde Graduate School, University of Science and Technology Beijing, Foshan 528399, China;3. Shanghai Microsatellite Engineering Center, Shanghai 201204, China;4. Innovation Academy for Microsatellites of CAS, Shanghai 201204, China;5. School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan 411201, China;6. Beijing Advanced Innovation Center of Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China;7. Beijing Laboratory of Metallic Materials and Processing for Modern Transportation, Beijing 10083, China;1. Key Laboratory of Hebei Province on Scale-span Intelligent Equipment Technology, School of Mechanical Engineering, Hebei University of Technology, Tianjin, PR China;2. School of Artificial Intelligence, Hebei University of Technology, Tianjin 300401, PR China;1. Ceramic Research Centre of Saga University, 2441–1 Oono-otsu, Arita-cho, Nishimatsuura-gun, Saga 844–0013, Japan;2. Faculty of Art and Regional Design, Saga University, 1 Honjo-cho, Saga 840–8502, Japan;3. Saga Ceramics Research Laboratory, 3037–7 Hei Kuromuta Arita-Cho, Nishimatsuura-gun, Saga 844–0022, Japan;4. Centre of Advanced Instrumental Analysis, Kyushu University, Fukuoka 816–8580, Japan;1. Department of Research and Development, SHOFU INC., Higashiyama-ku, Kyoto, Japan;2. Department of Chemistry and Materials Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, Japan;3. Department of Mechanical Engineering, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, Japan;4. Ceramic Physics Laboratory, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, Japan |
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| Abstract: | The good thermal conductivity of AlN is essential for insulation and high heat dissipation applications. However, the influence of oxygen impurities at various locations (the lattice oxygen and grain edge oxygen) on the thermal resistivity of AlN ceramics is unclear. In this study, AlN ceramics with various oxygen distributions are prepared by different methods, and the oxygen contents of different regions are distinguished. The results indicate that the lattice oxygen is the main factor affecting thermal resistivity. Meanwhile, high-temperature annealing and pre-sintering processes can lower the lattice oxygen content from 0.061 wt% to 0.038 wt% and 0.036 wt%, respectively. Additionally, when grain edge phase volume is less than 4 vol%, it does not contribute significantly to thermal resistivity. The main formation of thermal resistance changes from phonon-defect scattering to phonon-phonon scattering with increasing temperature. These results may be informative for the microstructure design of AlN ceramics with high thermal conductivity. |
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| Keywords: | Aluminum nitride Thermal conductivity Lattice oxygen Grain edge phases |
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