Synergistically optimizing thermoelectric performance of ZnO ceramics by interfacial band alignment and self-doping defects |
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| Affiliation: | 1. School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China;2. Tianjin Key Lab for Photoelectric Materials & Devices, Tianjin University of Technology, Tianjin 300384, China;3. Key Laboratory of Display Materials & Photoelectric Devices (Tianjin University of Technology), Ministry of Education, Tianjin 300384, China;1. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;2. School of Aerospace Manufacturing Engineering, Nanchang Hangkong University, Nanchang 330063, China;3. Heilongjiang Provincial Key Laboratory of CO2 Resource Utilization and Energy Catalytic Materials, School of Material Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150040, China;1. Physics Department, College of Science, Jouf University, P.O. Box: 2014, Sakaka, Saudi Arabia;2. Department of Physics, Center for Computational Materials Science, University of Malakand, Chakdara, Dir (Lower) 18800 Pakistan;3. Institute of Physics, Khwaja Fareed University of Engineering and Information Technology, Abu Dhabi Road, Rahim Yar Khan 64200, Pakistan;4. Department of Physics, Bahauddin Zakariya, University Multan, 60800. Pakistan;5. Laboratory of Magnetic Film Physics, Scientific-Practical Materials Research Centre of NAS of Belarus, 220072 Minsk, Belarus;6. Smart Sensors Laboratory, National University of Science and Technology MISiS, 119049 Moscow, Russia;7. Laboratory of Single Crystal Growth, South Ural State University, 454080 Chelyabinsk, Russia;1. State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou 310018, China;3. Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronics Engineering, Jiangsu Normal University, Xuzhou 221116, China;4. Henan Key Laboratory of Research for Central Plains Ancient Ceramics, Pingdingshan 467000, China;5. Faculty of Engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom;1. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;2. Shandong Provincial Key Lab of Special Welding Technology, Harbin Institute of Technology at Weihai, Weihai 264209, China;3. Shandong Institute of Shipbuilding Technology, Harbin Institute of Technology at Weihai, Weihai 264209, China;4. Zhengzhou Machinery Research Institute Co., Ltd., Zhengzhou 450001, China;5. China Machinery Intelligent Equipment Innovation Research Institute (Ningbo) Co., Ltd., Ningbo 315700, China;6. China Railway Engineering Equipment Co., Ltd., Zhengzhou 450016, China |
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| Abstract: | ZnO is a promising thermoelectric ceramic material due to non-toxicity and abundance in resources. However, its thermoelectric performance is limited by the intrinsic low carrier concentration and high thermal conductivity. In this work, we synthesized the (1 ? x)ZnO/xZnS (x = 0–0.05) powders by a two-step solution method followed by microwave sintering in an oxygen-deficient environment at 1000 ℃, and then produced the self-doped ZnO ceramics with ZnO/ZnS interfaces. The electrical and thermal properties was investigated from room temperature to 900 K. The ZnO/ZnS interface and self-doping significantly increased the electrical properties of ZnO ceramics, the electrical conductivity (σ) and Seebeck coefficient (α) increased simultaneously with temperature for (1 ? x)ZnO/xZnS (x > 0), and the highest power factor (PF, 3675 µW·m?1·K?2) was obtained from 0.98ZnO/0.02ZnS at 900 K. At the same time, the ZnO/ZnS interfaces and self-doped defects greatly reduced the lattice thermal conductivity. Finally, the highest ZT value of 0.94 has been reached in 0.95ZnO/0.05ZnS at 900 K. |
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| Keywords: | Thermoelectric property ZnO/ZnS interface Self-doping defects Microwave sintering |
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