Yb∶FAP晶体的生长及光谱性能

应用中频感应提拉法生长出不同掺杂浓度的Yb∶FAP激光晶体。运用电感耦合等离子体原子发射光谱仪(ICP-AES)测定了Yb3+离子在Yb∶FAP晶体中的分凝系数约为0.03。随着晶体的生长,晶体中Yb3+离子的轴向浓度逐渐增大。研究Yb∶FAP晶体在77 K和300 K温度下的吸收光谱发现,振动谱的变化主要是由电子-声子近共振耦合作用引起的。系统地研究了不同Yb3+离子掺杂浓度Yb∶FAP晶体的吸收光谱和荧光光谱。通过吸收光谱的测量计算了晶体的吸收截面。Yb∶FAP晶体在904 nm和982 nm处存在Yb3+离子的两个吸收带,适合激光二极管抽运。

Growth and Spectrum Properties of Yb∶FAP Laser Crystals

Yb∶FAP crystals with different Yb3+ ions dopant concentrations have been grown by Czochralski method. The segregation coefficient of Yb3+ ions in Yb∶FAP crystal detected by inductively coupled plasma atomic emission spectrometry (ICP-AES) method is equal to 0.03. The axial distribution of Yb3+ concentration increases gradually with the crystal growth. Experimental results of the absorption spectra of Yb∶FAP crystals at 77 K and 300 K have been reported in the paper. There are obvious vibronic peaks in the spectra of Yb∶FAP crystal owing to the near resonance effects of electron-phonon coupling. The absorption spectra and fluorescence spectra of Yb∶FAP crystals with different doped Yb2O3 concentrations have been measured at the room temperature. The spectroscopic parameters of Yb∶FAP crystals have been calculated according to the absorption spectra. Two absorption bands are centered at 904 nm and 982 nm of Yb3+, respectively, which are suitable for InGaAs diode laser pumping.