SiGe-based FETs: buffer issues and device results |
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Authors: | H.-J Herzog, T Hackbarth, G H ck, M Zeuner,U K nig |
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Affiliation: | aDaimlerChrysler AG, Research Center Ulm, P.O. Box 2360, 89231 Ulm, Germany |
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Abstract: | SiGe quantum well structures gain increasing interest in the Si technology. The preparation of a Si channel or a Ge-rich or even a pure Ge channel with a respective two-dimensional carrier gas opens the attractive possibility to fabricate high performance n- or p-type field effect transistors. For both device types, a virtual substrate surface is required which is created by a strain relieved buffer layer grown on a Si standard wafer. The paper reviews various approaches of SiGe buffers including special attempts to reduce the thickness and to improve the quality. N- and p-type modulation-doped field-effect transistors are presented which show comparably good device characteristics and cut-off frequencies in the range of 100–120 GHz. |
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Keywords: | SiGe Strain relieved buffer Si/SiGe hetero field-effect transistor |
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